搜索结果: 1-15 共查到“理学 Ge”相关记录52条 . 查询时间(0.08 秒)
2021年3月2日，通用电气医疗系统贸易发展（上海）有限公司（以下简称“GE医疗”）超声事业部浙江区经理金昊洋先生携公司无锡工厂专家一行5人到访我校滨江校区，医学影像学院党委书记陈小林、副院长彭成忠、副院长王大江、副书记颜美艳等与来访者在求实楼204会议室进行了座谈研讨，双方就进一步探讨校企合作、落实超声医学人才培养规划进行了深度交流，达成了战略共识。
采用基于密度泛函理论的第一性原理方法，研究了压力作用下Mg2Si和Mg2Ge的结构、弹性和热力学性质。计算结果表明：0 GPa压力作用下两者的晶格参数与实验值以及其他理论值吻合较好，且相对晶格常数a/a0和晶胞体积V/V0均随压力的增大而减小；在0~25 GPa压力作用下，Mg2Si和Mg2Ge相体模量B、剪切模量G、杨氏模量E均随压力的增大而增大，材料的刚度和塑性均增强，当压力达到15 GPa时...
近日，中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室SOI材料课题组在柔性Si/Ge纳米带确定性组装方面获得新进展。课题组提出了“边缘-剪切转移”（Edge-Cutting Transfer）技术，成功地实现了柔性Si/Ge纳米带在柔性基底上的可控转移及确定性组装。相关研究成果以Deterministic Assembly of Flexible Si/Ge Nanoribbons...
铅锌矿床地质样品的Ge同位素预处理方法研究
Ge同位素 闪锌矿 分离提纯 预处理方法
2014/5/27
目前Ge同位素研究主要局限于地球有机质（煤等）、火成岩及陨石样品，作为Ge重要储库之一的铅锌矿床，其Ge同位素的研究涉及较少。铅锌矿床样品中Ge的化学分离及提纯是Ge同位素研究的基础。本文详细考察了陨石样品中Ge同位素预处理方法（分离和提纯）对铅锌矿石样品的适用性。阴离子条件实验说明，目前普遍采用的离子交换树脂单柱法虽然对铅锌矿样品中Fe、Se等元素的剔除效果理想，但无法有效剔除其中的Zn，当Zn...
Comments on "Confidence distribution, the frequentist distribution estimator of a parameter --- a review" by Min-ge Xie and Kesar Singh
the frequentist distribution estimator parameter Min-ge Xie Kesar Singh Statistics Theory
2012/6/29
This note is a discussion of the paper "Confidence distribution" by Min-ge Xie and Kesar Singh, to appear in the International Statistical Review.
GELATIO: a general framework for modular digital analysis of high-purity Ge detector signals
Software architectures (event data models, frameworks and databases), Data processing methods, Gamma detectors
2011/8/31
GELATIO is a new software framework for advanced data analysis and digital signal processing developed for the GERDA neutrinoless double beta decay experiment. The framework is tailored to handle the ...
New structural model for GeO2/Ge interface: A first-principles study
New structural model for GeO2/Ge interface first-principles study
2010/11/24
First-principles modeling of a GeO2/Ge(001) interface reveals that sixfold GeO2, which is derived from cristobalite and is different from rutile, dramatically reduces the lattice mismatch at the inter...
Structure and spatial distribution of Ge nanocrystals subjected to fast neutron irradiation
Structure spatial distribution fast neutron irradiation
2010/11/23
The influence of fast neutron irradiation on the structure and spatial distribution of Ge nanocrystals (NC) embedded in an amorphous SiO2 matrix has been studied. The investigation was conducted by me...
Energy Levels, Transition Probabilities and Electron-Impact Excitations Of Ge-Like Pr, Nd, Pm, Sm and Eu ions
Energy Levels Ge-Like Pr
2010/11/16
Energies, wavelengths, transition probabilities, and oscillator strengths have been calculated for the 4s24p2-4s4p3, 4s24p2-4s24p4d and 4s4p3-4p4 allowed transitions in heavy Ge-like ions with Z=59-6...
First Principles Study of Si/Ge Core-Shell nanowires under external uniaxial strain
First Principles Study Si/Ge Core-Shell nanowires external uniaxial strain
2010/11/11
Density-functional theory based first principles calculations are performed to study the effects of external uniaxial strain on the electronic states of Si/Ge core-shell nanowires along the [110] dire...
采用全势线性缀加平面波(FPLAPW)方法, 在广义梯度近似(GGA)+自旋轨道耦合(SOC)+自旋极化(SP)下计算了具有AuCu3构型的Pu3M和PuM3 (M=Ga, In, Sn, Ge)化合物的平衡结构、电子结构和形成热. 计算的晶格常数与实验值符合得很好; 态密度分析表明Pu 和M 原子轨道间的杂化作用决定于Pu 6d-Pu 5f、Mp-Pu 6d和Msp-M sp轨道杂化之间的竞争,...
利用固源分子束外延(SSMBE)生长技术, 在Si(111)衬底上预沉积不同厚度(0、0.2、1 nm)Ge, 在衬底温度900 ℃, 生长SiC单晶薄膜. 利用反射式高能电子衍射仪(RHEED)、原子力显微镜(AFM)和傅立叶变换红外光谱(FTIR)等实验技术, 对生长的样品进行了研究. 结果表明, 预沉积少量Ge(0.2 nm)的样品, SiC薄膜表面没有孔洞存在, AFM显示表面比较平整, ...
LOW FLOW FREQUENCY ANALYSIS OF THE NILÜFER RIVER AT THE GEÇITKÖY STATION, TURKEY
Frequency analysis critical drought flows low flows surface water pollution
2009/10/13
Frequency analysis of low flows (critical drought flows) is the first step in surface water
pollution control. In this study, a Type-3 Extremal (or Weibull) Distribution with a lower limit
is appl...
Displacement damage dose approach to analyze ion irradiation effects on homemade GaAs/Ge solar cells
GaAs/Ge solar cells displacement damage dose carbon ion proton irradiation
2009/8/14
Displacement damage dose is applied to analyze the irradiation effects of 2 MeV carbon ions and 0.28~20 MeV protons on homemade GaAs/Ge solar cells. The NIEL for each ion is modified by taking into a...