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Manipulation of the Lande g-factor in InAs quantum dots through application of anisotropic gate potentials
Lande g-factor anisotropic gate potentials
2010/11/19
We study the variation in the Lande g-factor of electron spins induced by an anisotropic gate
potential in InAs quantum dots for potential use as non-charge based logic devices. In this paper,we pres...
Control of the direction and rate of nuclear spin flips in InAs quantum dots using detuned optical pulse trains
nuclear spin flips InAs quantum dots detuned optical pulse trains
2010/4/8
We find that detuning an optical pulse train from electronic transitions in quantum dots controls the direction of nuclear spin flips. The optical pulse train generates electron spins that precess abo...
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篇名
A novel line-order of InAs quantum dots on GaAs
语种
英文
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作者
X.Q. Meng*,P. Jin,B. Xu,C.M. Li,C.Y. Zhang,Z.G. Wang
第一作者单位
Institute of Semiconductors, Chinese Academy of Sciences
刊物名称
J. C...
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Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer
语种
英文
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作者
Z. Y. Zhang*,C. L. Yang,Y. Q. Wei,X ....
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Modulation Spectroscopy of GaAs Covered by InAs Quantum Dots
语种
英文
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作者
JIN Peng*,MENG Xian-Quan,ZHANG Zi-Yang,LI Cheng-Ming,QU Sheng-Chun,XU Bo,LIU Feng-Qi,WANG Zhan-Guo,LI Yi-Gang,ZHA...
期刊信息
篇名
Dependence of Optical Properties on the Structure of Multi-Layer Self-Organized InAs Quantum Dots Emitting Near 1.3?m
语种
英文
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撰写
作者
X. Q. Meng*,B. Xu,P. Jin,X. L. Ye,Z. Y. Zhang,C. M. Li,a...