搜索结果: 1-13 共查到“电子科学与技术 Diodes”相关记录13条 . 查询时间(0.047 秒)
With superconducting diodes, scholars advance work toward ultra-efficient quantum electronic devices（图）
超导二极管 量子电子器件 磁场
2023/6/26
A research team including Brown University faculty and students created a superconducting diode without a magnetic field in multi-layer graphene, a development that could form the basis for future “lo...
西安电子科技大学电子工程学院模拟电子线路英文课件Chapter1 Semiconductor Diodes
西安电子科技大学电子工程学院 模拟电子线路 英文课件 Chapter1 Semiconductor Diodes
2020/6/10
西安电子科技大学电子工程学院模拟电子线路英文课件Chapter1 Semiconductor Diodes。
Simulation of storage time versus reverse bias current for p+n and pin diodes
Reverse recovery pin diode semiconductor devices semiconductor devices simulation
2011/3/22
In this study, the reverse-recovery behaviors of pin and p+n diodes were simulated as a function of the reverse current and carrier lifetime. For this purpose, a 1-D simulation program was written to ...
The objective is to fabricate organic light emitting
diode and to study its degradation process in atmosphere condition in
which PFO as an emitting material and PEDOT:PSS as a hole
injecting materi...
Schottky Diodes and Thin Films Based on Copolymer: Poly(aniline-co-toluidine)
Schottky Diodes Thin Films Copolymer
2010/12/3
Poly(aniline-co-o-toluidine) (PANI-co-POT) thin films were deposited on indium tin oxide- (ITO-) coated glass substrates by electrochemical polymerization under cyclic voltammetric conditions from ani...
Spectroscopic Characterization of Electrodeposited Poly(o-toluidine) Thin Films and Electrical Properties of ITO/Poly(o-toluidine)/Aluminum Schottky Diodes
Spectroscopic Characterization Electrodeposited Poly(o-toluidine) Thin Films ITO/Poly(o-toluidine)/Aluminum Schottky Diodes
2010/12/6
Poly(o-toluidine) (POT) thin films were synthesized by electrochemical polymerization under cyclic voltammetric conditions from o-toluidine monomer in an aqueous solution of HCl as a supporting electr...
The application of quantum tunnelling devices for high-performance digital circuitry is presented. The reliability of devices based on III/V semiconductor heterostructures is demonstrated and the appl...
High-Speed Vertical-Cavity Laser Diodes at 1.55 μm
High-Speed Vertical-Cavity Laser Diodes
2010/7/15
Buried tunnel junction vertical-cavity surface-emitting lasers (BTJ-VCSELs) for 1.55 μm wavelength, 3dB-cut-off-frequencies around 8 GHz, modulation bandwidths up to 10 Gbit/s and excellent stationary...
Device Simulation of Double Photo-diodes
double photo-diode（DPD） optoelectronics integrated circuit (OEIC)
2010/7/16
Photo-generated carriers’ transmission delay of a CMOS-Process-Compatible double photo-diode（DPD）is analyzed by using device simulation in this paper. The carriers’ transmission delay of a DPD in CMOS...
The operation principles of electrically tunable laser diodes, the device structures for continuous and discontinuous tuning and the relevant device characteristics are presented. Recent progress with...
Fabrication of AlGaInP/GaInP Laser Diodes by Molecular Beam Epitaxy
AlGaInP/GaInP Laser Molecular Beam Epitaxy
2010/12/10
Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated. In this report, two ki...
Fabrication of Schottky-Barrier Diodes Using a Thick Film Technique
Schottky-Barrier Diodes a Thick Film Technique
2010/12/23
Schottky-barrier diodes have been fabricated using a thick-film technique. A change in V–I characteristic with firing temperature has been observed. This technique is compatible with hybrid circuit te...