搜索结果: 31-45 共查到“理学 silicon”相关记录99条 . 查询时间(0.069 秒)
A High-resolution Scintillating Fiber Tracker With Silicon Photomultiplier Array Readout
High-resolution Scintillating Fiber Tracker Silicon Photomultiplier
2010/11/12
We present prototype modules for a tracking detector consisting of multiple layers of 0.25 mm diameter scintillating fibers that are read out by linear arrays of silicon photomultipliers. The module ...
A High-resolution Scintillating Fiber Tracker With Silicon Photomultiplier Array Readout
tracker scintillating ber silicon photomultiplier SiPM MPPC
2011/1/5
We present prototype modules for a tracking detector consisting of multiple layers of 0:25mm diameter scintillating bers that are read out by linear arrays of silicon photomultipliers.
Large enhancement in hole velocity and mobility in p-type [110] and [111] silicon nanowires by cross section scaling: An atomistic analysis
silicon nanowire mobility p-type holes atomistic bandstructure
2010/11/22
The mobility of p-type nanowires (NWs) of diameters of D=12nm down to D=3nm, in [100], [110], and [111] transport orientations is calculated. An atomistic tightbinding model is used to calculate the N...
Industrially Scalable Process for Silicon Nanowires for Seebeck Generators
Industrially Scalable Process Silicon Nanowires Seebeck Generators
2010/11/25
Industrially Scalable Process for Silicon Nanowires for Seebeck Generators.
Fabrication and characterization of high quality factor silicon nitride nanobeam cavities
Fabrication characterization quality factor silicon nitride nanobeam cavities
2010/11/9
Si3N4 is an excellent material for applications of nanophotonics at visible wavelengths due to its wide bandgap and moderately large refractive index (n $\approx$ 2.0). We present the fabrication and ...
We study two-electron singlet-triplet relaxation of donor-bound electrons in Silicon. Hyperfine interaction of the electrons with the phosphorus (P) nuclei, in combination with the electron-phonon int...
Phosphorus Spin Coherence Times in Silicon at Very Low Temperatures
magnetic resonance donor spins in silicon quantum computing
2010/10/27
Phosphorus donor spin coherence in isotopically pure 28 silicon is measured at very low temperatures using pulsed electron spin resonance. The isolated spin T2 varies unexpectedly with phosphorus conc...
Spatial Non-uniformity Measurements of Large Area Silicon Photodiodes
Photometry Silicon Photodiode Spatial Uniform
2010/4/13
Accurate determination of the responsivity of silicon photodiodes are highly desired in photometry. The change of responsivity over the surface, the so-called spatial non-uniformity, effects power mea...
Synthesis, characterization, and application of nanoporous materials based on silicon- or halogen-containing spiroketal and spirothioketal polymers
Tetra(trimethylsilyl)-9,10-anthraquinone spiroketal polymers
2010/10/14
Organic microporous materials based on silicon-containing spiroketal and spirothioketal polymers were synthesized via a 1,3-dioxol-forming polymerization reaction between 1,1a,4,4a,5,5a,8, 8a-octahydr...
Silicon Photo-Multiplier radiation hardness tests with a beam controlled neutron source
Silicon Photo-Multiplier beam controlled neutron source
2010/3/16
We report radiation hardness tests performed at the Frascati Neutron Generator on silicon Photo-Multipliers, semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a si...
Operation and calibration of the Silicon Drift Detectors of the ALICE experiment during the 2008 cosmic ray data taking period
Trackong detectors silicon detectors LHC
2010/3/15
The calibration and performance of the Silicon Drift Detector of the ALICE experiment during the 2008 cosmic ray run will be presented. In particular the procedures to monitor the running parameters (...
Charge collection in the Silicon Drift Detectors of the ALICE experiment
dE/dx detectors Particle tracking detectors
2010/3/15
A detailed study of charge collection efficiency has been performed on the Silicon Drift Detectors (SDD) of the ALICE experiment. Three different methods to study the collected charge as a function of...
Evaluation of Outermost Surface Temperature of Silicon Substrates during UV-Excited Ozone Oxidation at Low Temperature
Evaluation Outermost Surface Temperature Silicon UV-Excited Ozone Oxidation Low Temperature
2010/9/17
Using ultraviolet (UV)-excited ozone gas, we prepared high-quality SiO2 films that can be used as gate dielectric films on poly-silicon or silicon wafers without sample heating. The UV-excited ozone g...
Comparison study of the charge density distribution induced by heavy ions and pulsed lasers in silicon
heavy ion pulsed laser charge density distribution
2009/12/24
Heavy ions and pulsed lasers are important means to simulate the ionization damage effects on semiconductor materials. The analytic solution of high-energy heavy ion energy loss in silicon has been ob...
Statistical measures of distribution patterns of silicon and calcium in marine sedimentary layers
Statistical measures distribution patterns silicon calcium marine sedimentary layers
2009/11/3
We analyze electron microscope X-ray spectroscopy data of recent supratidal marine sediments. Statistical measures are used to characterize the distribution of silicon and calcium in different layers ...