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High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
High growth rate 4H-SiC epitaxial growth hot-wall CVD reactor
2010/11/18
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical
vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We
discuss the use of dichlorosil...
“Computer simulations of fluid flow and heat transfer in metal strip heating zone crystal growth”
2007/7/28
专著信息
书名
“Computer simulations of fluid flow and heat transfer in metal strip heating zone crystal growth”
语种
英文
撰写或编译
作者
S. Y. Zhang,D. Q. Ni,Y. T. Song,X. Wu
第一作者单位
出版社
Journal of Crystal Growth, 243...