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We present, a systematic theoretical study of the adsorption of Ga, In and N over GaAs (110) surfaces based on parameter-free, self-consistent total energy and force calculations using the density fun...
Electron Transport Mechanism in GaN/AlGaN HEMT Structures
GaN Momentum Relaxation LO Phonon Scattering
2010/4/13
The electron transport mechanism in GaN/AlGaN HEMT (High Electron Mobility Transistors) structures grown with MBE on sapphire substrate was investigated by using the temperature dependence of the Hall...